Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
60V Complementary Enhancement Mode MOSFET H-Bridge
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
No |
Polarity |
2N2P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
60 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
3.1, 2.4 A |
PD @TA = +25°C (W) |
1.6 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
100, 170 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
120, 250 mΩ |
|VGS(TH)| Min (V) |
1, 1 V |
|VGS(TH)| Max (V) |
3, 3 V |
QG Typ @ |VGS| = 10V (nC) |
11.5, 8.9 nC |
CISS Typ (pF) |
731, 618 pF |
CISS Condition @|VDS| (V) |
20, 20 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
