Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8
40V Complementary Enhancement Mode MOSFET H-Bridge
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
Compliance (Only Automotive Supports PPAP) |
Standard |
|---|---|
AEC Qualified |
Yes |
Polarity |
2N2P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
40 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
4.5, 3.7 A |
PD @TA = +25°C (W) |
1.5 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
45, 65 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
58, 100 mΩ |
|VGS(TH)| Min (V) |
1, 1 V |
|VGS(TH)| Max (V) |
3, 3 V |
QG Typ @ |VGS| = 10V (nC) |
12.5, 11.1 nC |
CISS Typ (pF) |
574, 587 pF |
CISS Condition @|VDS| (V) |
20, 20 V |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
