Diodes Incorporated
SO 8

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DMHC3025LSDQ

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This new generation complementary MOSFET H-Bridge features 2 N and 2 P channel in an SOIC package.

Feature(s)

  • 2 x N + 2 x P channels in a SOIC package
  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Solenoids
  • DC Motors
  • Audio Outputs

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity 2N2P
ESD Diodes (Y|N) No
|VDS| (V) 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6, 4.2 A
PD @TA = +25°C (W) 1.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 25, 50 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 40, 80 mΩ
|VGS(TH)| Min (V) 1, 1 V
|VGS(TH)| Max (V) 2, 2 V
QG Typ @ |VGS| = 10V (nC) 11.7, 11.4 nC
CISS Typ (pF) 590, 631 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf