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DMHC3025LSD

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE

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Description

This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.

Feature(s)

2 x N + 2 x P channels in a SOIC package
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability

Application(s)

DC Motor control
DC-AC Inverters

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	2N2P
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	30 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	6, 4.2 A
P_D @T_A = +25°C (W)	1.5 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	25, 50 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	40, 80 mΩ
\|V_GS(TH)\| Min (V)	1, 1 V
\|V_GS(TH)\| Max (V)	2, 2 V
Q_G Typ @ \|V_GS\| = 10V (nC)	11.7, 11.4 nC
C_ISS Typ (pF)	590, 631 pF
C_ISS Condition @\|V_DS\| (V)	15, 15 V

Technical Documents

SPICE Model

DMHC3025LSD.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2495	2021-03-31	2021-07-01	Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products