30V Complementary Enhancement Mode MOSFET H-Bridge
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This new generation complementary MOSFET H-Bridge features low on-resistance achievable with low gate drive.
Compliance (Only Automotive Supports PPAP) |
Standard |
---|---|
AEC Qualified |
Yes |
Polarity |
2N2P |
ESD Diodes (Y|N) |
No |
|VDS| (V) |
30 V |
|VGS| (±V) |
20 ±V |
|IDS| @TA = +25°C (A) |
6, 4.2 A |
PD @TA = +25°C (W) |
1.5 W |
RDS(ON)Max@ VGS(10V) (mΩ) |
25, 50 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
40, 80 mΩ |
|VGS(TH)| Min (V) |
1, 1 V |
|VGS(TH)| Max (V) |
2, 2 V |
QG Typ @ |VGS| = 10V (nC) |
11.7, 11.4 nC |
CISS Typ (pF) |
590, 631 pF |
CISS Condition @|VDS| (V) |
15, 15 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |