Diodes Incorporated — Analog and discrete power solutions
PowerDI3333 8

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DMG7410SFG

N-Channel Enhancement Mode MOSFET

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Description

This new generation 30V N channel enhancement mode MOSFET integrate a MOSFET a single die to deliver:
  • Low RDS(ON) - minimizes conduction losses
  • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shoot through or cross conduction currents at high frequencies
  • Avalanche rugged – IAR and EAR rated
  • Application(s)

  • Backlighting
  • DC-DC Converters
  • Power management functions
  • Specifications & Technical Documents

    Product Parameters

    Compliance (Only Automotive Supports PPAP)

    Standard

    AEC Qualified

    Yes

    Polarity

    N

    ESD Diodes (Y|N)

    No

    |VDS| (V)

    30 V

    |VGS| (±V)

    25 ±V

    |IDS| @TA = +25°C (A)

    8 A

    PD @TA = +25°C (W)

    2.07 W

    RDS(ON)Max@ VGS(10V)  (mΩ)

    20 mΩ

    RDS(ON)Max@ VGS(4.5V)  (mΩ)

    27 mΩ

    |VGS(TH)| Max (V)

    2 V

    QG Typ @ |VGS| = 4.5V (nC)

    5.3 nC

    QG Typ @ |VGS| = 10V (nC)

    11.3 nC

    CISS Typ (pF)

    580 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Purchase & Availability

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    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products