N-CHANNEL ENHANCEMENT MODE MOSFET
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This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) |
25 |
|---|---|
CISS Typ (pF) |
532 |
ESD Diodes (Y|N) |
No |
Polarity |
N |
QG Typ @ |VGS| = 10V (nC) |
14.3 |
QG Typ @ |VGS| = 4.5V (nC) |
N/A |
AEC Qualified |
No |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(10V) (mΩ) |
3000 |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
N/A |
|VDS| (V) |
600 |
|VGS| (±V) |
30 |
|VGS(TH)| Max (V) |
4.5 |
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