Diodes Incorporated
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DMG4N60SJ3 (Obsolete)

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Feature(s)

  • Low Input Capacitance
  • High BVDSS Rating for Power Application
  • Low Input/Output Leakage
  • Lead-Free Finish; RoHS Compliant
  • Halogen and Antimony Free. “Green” Device

Application(s)

  • AC-DC Adaptor
  • LED Backlighting

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) No
CISS Condition @|VDS| (V) 25
CISS Typ (pF) 532
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) N/A
|IDS| @TC = +25°C (A) 3
PD @TA = +25°C (W) N/A
PD @TC = +25°C (W) 41
Polarity N
QG Typ @ |VGS| = 10V (nC) 14.3
QG Typ @ |VGS| = 4.5V (nC) N/A
AEC Qualified No
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) 3000
RDS(ON)Max@ VGS(2.5V)(mΩ) N/A
RDS(ON)Max@ VGS(4.5V)(mΩ) N/A
|VDS| (V) 600
|VGS| (±V) 30
|VGS(TH)| Max (V) 4.5

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life

FAQs

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