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SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMG4407SSS (NRND)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V P channel enhancement mode MOSFET

  • Low RDS(ON) - minimizes conduction losses diode switching losses
  • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
  • Avalanche rugged – IAR and EAR rated

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters

Specifications & Technical Documents

Product Parameters

CISS Condition @|VDS| (V)

N/A

CISS Typ (pF)

N/A

ESD Diodes (Y|N)

Yes

Polarity

P

QG Typ @ |VGS| = 10V (nC)

41

QG Typ @ |VGS| = 4.5V (nC)

20.5

AEC Qualified

Yes

RDS(ON)Max@ VGS(1.8V)  (mΩ)

3

RDS(ON)Max@ VGS(10V)  (mΩ)

13

RDS(ON)Max@ VGS(2.5V)  (mΩ)

N/A

RDS(ON)Max@ VGS(4.5V)  (mΩ)

14

|VDS| (V)

30

|VGS| (±V)

25

|VGS(TH)| Max (V)

3

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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