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DMG4407SSS (Not Recommended for new design)

NRND = Not Recommended for New Design

P-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 30V P channel enhancement mode MOSFET

Low R_DS(ON) - minimizes conduction losses diode switching losses
Low gate capacitance (Q_g/Q_gs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies
Avalanche rugged – I_AR and E_AR rated

Application(s)

Backlighting
Power Management Functions
DC-DC Converters

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	On Request
C_ISS Condition @\|V_DS\| (V)	N/A
C_ISS Typ (pF)	N/A
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	12.5
P_D @T_A = +25°C (W)	1.45
Polarity	P
Q_G Typ @ \|V_GS\| = 10V (nC)	41
Q_G Typ @ \|V_GS\| = 4.5V (nC)	20.5
AEC Qualified	Yes
R_DS(ON)Max@ V_GS(1.8V)(mΩ)	3
R_DS(ON)Max@ V_GS(10V)(mΩ)	13
R_DS(ON)Max@ V_GS(2.5V)(mΩ)	N/A
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	14
\|V_DS\| (V)	30
\|V_GS\| (±V)	25
\|V_GS(TH)\| Max (V)	3

Technical Documents

SPICE Model

DMG4407SSS.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2389	2019-02-05	2019-08-05	Device End of Life