Diodes Incorporated — Analog and discrete power solutions
SOT23

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23

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DMG3420UQ

N-Channel Enhancement Mode MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Polarity

N

ESD Diodes (Y|N)

No

|VDS| (V)

20 V

|VGS| (±V)

12 ±V

|IDS| @TA = +25°C (A)

5.47 A

PD @TA = +25°C (W)

0.74 W

RDS(ON)Max@ VGS(10V)  (mΩ)

29 mΩ

RDS(ON)Max@ VGS(4.5V)  (mΩ)

35 mΩ

RDS(ON)Max@ VGS(2.5V)  (mΩ)

48 mΩ

RDS(ON)Max@ VGS(1.8V)  (mΩ)

91 mΩ

|VGS(TH)| Min (V)

0.5 V

|VGS(TH)| Max (V)

1.2 V

QG Typ @ |VGS| = 4.5V (nC)

5.4 nC

CISS Typ (pF)

434 pF

CISS Condition @|VDS| (V)

10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2722 2025-02-11 2025-05-12 Change Lead Frame Type from SOT-23R to SOT-23T and Qualify Additional Diodes Internal Assembly and Test Site (CAT) for Select Automotive Products
PCN-2485 2020-12-04 2021-03-04 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu or Au Bond Wire, And Qualification of Additional Wafer Source for Select Discrete Automotive Products