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DMG3413L

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • DC-DC Converters
  • Power management functions
  • Analog Switch
  • Product Specifications

    Product Parameters

    Qualified to AEC-Q10x Yes
    Compliance (Only Automotive supports PPAP) On Request
    Polarity P
    ESD Diodes (Y|N) No
    VDS (V) 20 V
    VGS (±V) 8 ±V
    IDS @TA = +25°C (A) 3 A
    PD @TA = +25°C (W) 1.3 W
    RDS(ON)Max @ VGS(4.5V)(mΩ) 95 mΩ
    RDS(ON)Max @ VGS(2.5V)(mΩ) 130 mΩ
    RDS(ON)Max @ VGS(1.8V)(mΩ) 190 mΩ
    VGS (th) Max (V) 1.3 V
    QG Typ @ VGS = 4.5V (nC) 9 nC

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    PCNs

    Product Change Notices

    PCN # Issue Date Implementation Date Subject
    PCN-2340 2018-04-26 2018-05-26 Qualification of Alternate Wafer Sources for Select MOSFET Products