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DMG3406L

30V N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Battery Charging
  • Power Management Functions
  • DC-DC Converters
  • Portable Power Adaptors

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 

Product Specifications

Product Parameters

Qualified to AEC-Q10x No
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) No
VDS (V) 30 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 3.6 A
PD @TA = +25°C (W) 1.4 W
RDS(ON)Max @ VGS(10V)(mΩ) 50 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 70 mΩ
VGS (th) Max (V) 2 V
QG Typ @ VGS = 4.5V (nC) 5.3 nC
QG Typ@ VGS = 10V(nC) 11.2 nC

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Orderable Part Number Buy from Distributor / Contact Sales Request Samples
DMG3406L-7

DMG3406L-7

Authorized Distributor Quantity Inventory Date Countries/Regions Buy Online
Digi-Key Electronics 2993 9/19/2021 Europe, Asia, North America Buy Now
Micronetics GmbH 66000 9/13/2021 Germany Contact Sales
Request Sample

PCNs

Product Change Notices

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products

FAQs

Related Application FAQs