Diodes Incorporated
SC59

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DMG3401LSN

30V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation 30V P-Channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application

Application(s)

  • Motor Control
  • Backlighting
  • DC-DC Converters
  • Power management functions
  • Product Specifications

    Product Parameters

    AEC Qualified Yes
    Compliance (Only Automotive(Q) supports PPAP) Standard
    Polarity P
    ESD Diodes (Y|N) No
    |VDS| (V) 30 V
    |VGS| (±V) 12 ±V
    |IDS| @TA = +25°C (A) 3.7 A
    PD @TA = +25°C (W) 1.2 W
    RDS(ON)Max@ VGS(10V)(mΩ) 50 mΩ
    RDS(ON)Max@ VGS(4.5V)(mΩ) 60 mΩ
    RDS(ON)Max@ VGS(2.5V)(mΩ) 85 mΩ
    |VGS(TH)| Max (V) 1.3 V
    QG Typ @ |VGS| = 4.5V (nC) 11.6 nC
    QG Typ @ |VGS| = 10V (nC) 25.1 nC
    CISS Typ (pF) 1326 pF

    Related Content

    Packages

    Technical Documents

    SPICE Model

    Recommended Soldering Techniques

    TN1.pdf

    RoHS CofC

    Product Change Notices (PCNs)

    A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

    PCN # Issue Date Implementation Date Subject
    PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
    Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products