NRND = Not Recommended for New Design
P-CHANNEL ENHANCEMENT MODE MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
CISS Condition @|VDS| (V) | 15 |
---|---|
CISS Typ (pF) | 371.3 |
Configuration | Single |
ESD Diodes (Y|N) | No |
Polarity | P |
QG Typ @ |VGS| = 10V (nC) | 8.2 |
QG Typ @ |VGS| = 4.5V (nC) | 4 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(10V) (mΩ) | 90 |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 134 |
|VDS| (V) | 30 |
|VGS| (±V) | 20 |
|VGS(TH)| Max (V) | 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2639 | 2023-09-26 | 2023-12-26 | Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products |