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DMG2305UXQ

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Motor Control
  • Automotive

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Product Specifications

Product Parameters

Qualified to AEC-Q10x Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive (Q)
Polarity P
ESD Diodes (Y|N) No
|VDS| (V) 20 V
|VGS| (±V) 8 ±
|IDS| @TA = +25°C (A) 5
PD @ TA = +25°C (W) 1.4
RDS(ON)Max @ VGS(4.5V)(mΩ) 52 mΩ
RDS(ON)Max @ VGS(2.5V)(mΩ) 100 mΩ
RDS(ON)Max @ VGS(1.8V)(mΩ) 200 mΩ
|VGS(th)| Min (V) 0.5
|VGS(th)| Max (V) 0.9 V
QG Typ @ |VGS| = 4.5V (nC) 10.2 nC
CISS Typ (pF) 808
CISS Condition [@VDS] (V) 15

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf