Diodes Incorporated
SOT23

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DMG2301LK

P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • ESD Protected Gate

Application(s)

  • Backlighting
  • Power Management Functions
  • DC-DC Converters
  • Motor Control

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 12 ±V
|IDS| @TA = +25°C (A) 2.4
PD @TA = +25°C (W) 1.4
RDS(ON)Max@ VGS(4.5V)(mΩ) 160 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 210 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 298 mΩ
|VGS(TH)| Min (V) 0.3 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 1.6 nC
QG Typ @ |VGS| = 10V (nC) 3.4 nC
CISS Typ (pF) 156 pF
CISS Condition @|VDS| (V) 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2458 2020-07-01 2020-10-01 Qualification of Assembly & Test Site Transfer, and Additional Assembly & Test Site for Select Discrete Products