Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT563
NRND = Not Recommended for New Design
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation 60V N+P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application
| CISS Condition @|VDS| (V) | 25, 25 |
|---|---|
| CISS Typ (pF) | 30, 25 |
| ESD Diodes (Y|N) | No |
| Polarity | N+P |
| QG Typ @ |VGS| = 4.5V (nC) | 0.3, 0.28 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(10V) (mΩ) | 1700, 4000 |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 3000, 6000 |
| |VDS| (V) | 60, 60 |
| |VGS| (±V) | 20, 20 |
| |VGS(TH)| Max (V) | 2.5, 3 |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
