NRND = Not Recommended for New Design
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation 60V N+P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld application
CISS Condition @|VDS| (V) | 25, 25 |
---|---|
CISS Typ (pF) | 30, 25 |
ESD Diodes (Y|N) | No |
Polarity | N+P |
QG Typ @ |VGS| = 4.5V (nC) | 0.3, 0.28 |
AEC Qualified | Yes |
RDS(ON)Max@ VGS(10V) (mΩ) | 1700, 4000 |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 3000, 6000 |
|VDS| (V) | 60, 60 |
|VGS| (±V) | 20, 20 |
|VGS(TH)| Max (V) | 2.5, 3 |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |
PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |