Diodes Incorporated
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DMG1013TQ

20V P-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101 and supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage

Application(s)

  • DC-DC Converters
  • Load Switch
  • Power Management Functions

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Automotive
Polarity P
ESD Diodes (Y|N) Yes
|VDS| (V) 20 V
|VGS| (±V) 6 ±V
|IDS| @TA = +25°C (A) 0.46 A
PD @TA = +25°C (W) 0.27 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 700 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 900 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 1300 mΩ
|VGS(TH)| Min (V) 0.5 V
|VGS(TH)| Max (V) 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.58 nC
CISS Typ (pF) 59.76 pF
CISS Condition @|VDS| (V) 16 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2639 2023-09-26 2023-12-26 Qualification of Internal "Diodes Technology (Cheng Du) Company Limited" (CAT) as Additional Assembly & Test Site Using PdCu Bond Wire with Standardization of Assembly Bill of Materials at CAT for Select Automotive Products