Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26
Complementary Pair Enhancement Mode MOSFET
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This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Polarity | N+P |
| ESD Diodes (Y|N) | Yes |
| |VDS| (V) | 25, 25 V |
| |VGS| (±V) | 8, 8 ±V |
| |IDS| @TA = +25°C (A) | 0.68, 0.46 A |
| PD @TA = +25°C (W) | 0.9 W |
| RDS(ON)Max@ VGS(4.5V) (mΩ) | 450, 1100 mΩ |
| RDS(ON)Max@ VGS(2.5V) (mΩ) | 600, 1500 mΩ |
| RDS(ON)Max@ VGS(1.8V) (mΩ) | 730, 2200 mΩ |
| |VGS(TH)| Min (V) | 0.45, 0.5 V |
| |VGS(TH)| Max (V) | 1.1, 1.1 V |
| QG Typ @ |VGS| = 4.5V (nC) | 1.64, 1.1 nC |
| CISS Typ (pF) | 50, 63 pF |
| CISS Condition @|VDS| (V) | 10, 10 V |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2495 | 2021-03-31 | 2021-07-01 | Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process Source for Select Discrete Products |
