Diodes Incorporated
SO 8

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Complementary Pair Enhancement Mode MOSFET

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This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.


  • Low Input Capacitance
  • Low On-Resistance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability


  • DC-DC Converters
  • Power Management Functions
  • Backlighting

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 30, 30 V
|VGS| (±V) 20 ±V
|IDS| @TA = +25°C (A) 6.5, 6.2 A
PD @TA = +25°C (W) 1.6 W
RDS(ON)Max@ VGS(10V)(mΩ) 25, 28 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 29, 38 mΩ
|VGS(TH)| Min (V) 1 V
|VGS(TH)| Max (V) 3 V
QG Typ @ |VGS| = 4.5V (nC) 6, 10.9 nC
QG Typ @ |VGS| = 10V (nC) 13.2 nC
CISS Typ (pF) 14.6, 17 pF
CISS Condition @|VDS| (V) 15 V

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