Diodes Incorporated — Analog and discrete power solutions
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SO-8

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DMC3025LSD

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

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Description

This new generation 30V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC FAN , Battery packing and other power management functions.

Application(s)

  • DC Motor Control
  • DC-AC Inverters

Specifications & Technical Documents

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 30, 30 V
|VGS| (±V) 20, 20 ±V
|IDS| @TA = +25°C (A) 8.5, 5.5
PD @TA = +25°C (W) 1.2
RDS(ON)Max@ VGS(10V)(mΩ) 20, 45 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 32, 85 mΩ
|VGS(TH)| Max (V) 2, 2 V
QG Typ @ |VGS| = 4.5V (nC) 4.6, 5.1 nC
QG Typ @ |VGS| = 10V (nC) 9.8, 10.5 nC
CISS Typ (pF) 501, 590 pF
CISS Condition @|VDS| (V) 25,25 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availablity

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2601 2022-10-28 2023-01-28 Additional Wafer Source for Select Discrete Products