Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.
SO-8.png30V COMPLEMENTARY ENHANCEMENT MODE MOSFET
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This new generation 30V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC FAN , Battery packing and other power management functions.
| AEC Qualified | Yes |
|---|---|
| Compliance (Only Automotive(Q) supports PPAP) | Standard |
| Polarity | N+P |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 30, 30 V |
| |VGS| (±V) | 20, 20 ±V |
| |IDS| @TA = +25°C (A) | 8.5, 5.5 A |
| PD @TA = +25°C (W) | 1.2 W |
| RDS(ON)Max@ VGS(10V)(mΩ) | 20, 45 mΩ |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 32, 85 mΩ |
| |VGS(TH)| Max (V) | 2, 2 V |
| QG Typ @ |VGS| = 4.5V (nC) | 4.6, 5.1 nC |
| QG Typ @ |VGS| = 10V (nC) | 9.8, 10.5 nC |
| CISS Typ (pF) | 501, 590 pF |
| CISS Condition @|VDS| (V) | 25,25 V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2601 | 2022-10-28 | 2023-01-28 | Additional Wafer Source for Select Discrete Products |
| PCN-2425 | 2019-10-04 | 2020-01-04 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products. |
| PCN-2403 | 2019-03-25 | 2019-06-19 | Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, Additional Wafer Source, or Additional Assembly and Test site for Select Products. |
