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TO252-DPAK.pngNRND = Not Recommended for New Design
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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This new generation 30V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to DC FAN , Battery packing and other power management functions.
| Compliance (Only Automotive supports PPAP) | On Request |
|---|---|
| CISS Condition @|VDS| (V) | 10 |
| CISS Typ (pF) | 751, 1039 |
| ESD Diodes (Y|N) | No |
| |IDS| @TA = +25°C (A) | 14, 14 |
| PD @TA = +25°C (W) | 2.75 |
| Polarity | N+P |
| QG Typ @ |VGS| = 10V (nC) | 17.4, 21.1 |
| QG Typ @ |VGS| = 4.5V (nC) | 9, 10.1 |
| AEC Qualified | Yes |
| RDS(ON)Max@ VGS(1.8V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(10V)(mΩ) | 21, 39 |
| RDS(ON)Max@ VGS(2.5V)(mΩ) | N/A |
| RDS(ON)Max@ VGS(4.5V)(mΩ) | 32, 53 |
| |VDS| (V) | 30, 30 |
| |VGS| (±V) | 20, 20 |
| |VGS(TH)| Max (V) | 2.1, 2.2 |
