Diodes Incorporated
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DMC2990UDJ

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This new generation 20V N + P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to portable , Battery packing and other power management functions.

Application(s)

  • General Purpose Interfacing Switch
  • Power Management Functions
  • Analog Switch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) Yes
|VDS| (V) 20, 20 V
|VGS| (±V) 8, 8 ±V
|IDS| @TA = +25°C (A) 0.45, 0.31 A
PD @TA = +25°C (W) 0.35 W
RDS(ON)Max@ VGS(4.5V)(mΩ) 990, 1900 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 1200, 2400 mΩ
RDS(ON)Max@ VGS(1.8V)(mΩ) 1800, 3400 mΩ
|VGS(TH)| Min (V) 0.4, 0.4 V
|VGS(TH)| Max (V) 1, 1 V
QG Typ @ |VGS| = 4.5V (nC) 0.5, 0.4 nC
CISS Typ (pF) 27.6, 28.7 pF
CISS Condition @|VDS| (V) 15, 15 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2582 2022-05-17 2022-08-17 Qualified Additional Bill of Material (BOM) – Lead Frame Raw Material (C19400 XSH)