Diodes Incorporated — Analog and discrete power solutions
TSOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26

TSOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26

TSOT26

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26

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DMC2053UVTQ

Complementary Pair Enhancement Mode MOSFET

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Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • The DMC2053UVTQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Application(s)

  • Backlighting
  • DC-DC Converters
  • Power Management Functions

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP) Automotive
AEC Qualified Yes
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 20, 20 V
|VGS| (±V) 12, 12 ±V
|IDS| @TA = +25°C (A) 4.6, 3.2 A
PD @TA = +25°C (W) 1.1 W
RDS(ON)Max@ VGS(4.5V)  (mΩ) 35, 74 mΩ
RDS(ON)Max@ VGS(2.5V)  (mΩ) 43, 110 mΩ
RDS(ON)Max@ VGS(1.8V)  (mΩ) 56, 168 mΩ
|VGS(TH)| Min (V) 0.4, 0.45 V
|VGS(TH)| Max (V) 1, 1 V
QG Typ @ |VGS| = 4.5V (nC) 3.6, 5.9 nC
CISS Typ (pF) 369, 440 pF
CISS Condition @|VDS| (V) 10, 10 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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