Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. TSOT26
NRND = Not Recommended for New Design
Inactive Datasheet Archive
Contact Sales
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
This new generation 20V N +P channel enhancement mode MOSFET has been designed to minimise RDS(on) and yet maintain superior switching performance. This device is ideally suited to Handheld applications.
CISS Condition @|VDS| (V) |
10 |
|---|---|
CISS Typ (pF) |
400, 530 |
ESD Diodes (Y|N) |
No |
Polarity |
N+P |
QG Typ @ |VGS| = 10V (nC) |
N/A |
QG Typ @ |VGS| = 4.5V (nC) |
5.7, 7 |
AEC Qualified |
Yes |
RDS(ON)Max@ VGS(1.8V) (mΩ) |
56, 168 |
RDS(ON)Max@ VGS(10V) (mΩ) |
N/A |
RDS(ON)Max@ VGS(2.5V) (mΩ) |
43, 110 |
RDS(ON)Max@ VGS(4.5V) (mΩ) |
35, 74 |
|VDS| (V) |
20 |
|VGS| (±V) |
12 |
|VGS(TH)| Max (V) |
1 |
|VGS(TH)| Min (V) |
0.4 |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |
