Diodes Incorporated
SO 8

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

SO-8.png
Back to MOSFET Master Table

DMC10H172SSD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature(s)

  • 100% Unclamped Inductive Switch (UIS) Test in Production
  • Low Input Capacitance
  • Low On-Resistance
  • Fast Switching Speed
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Application(s)

  • DC-DC converters
  • Power management functions
  • Backlighting  

Product Specifications

Product Parameters

AEC Qualified No
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 100,100 V
|VGS| (±V) 20,20 ±V
|IDS| @TA = +25°C (A) 2,1.7 A
PD @TA = +25°C (W) 1.5 W
RDS(ON)Max@ VGS(10V)(mΩ) 160,250 mΩ
RDS(ON)Max@ VGS(4.5V)(mΩ) 200,300 mΩ
|VGS(TH)| Min (V) 1,1 V
|VGS(TH)| Max (V) 3,3 V
QG Typ @ |VGS| = 4.5V (nC) 19.6,18 nC
QG Typ @ |VGS| = 10V (nC) 9.6,9 nC
CISS Typ (pF) 1145,1030 pF
CISS Condition @|VDS| (V) 50,50 V

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf