Diodes Incorporated
U DFN2020 6 Type F

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U-DFN2020-6-Type-F.png
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DMC1030UFDBQ (Not Recommended for new design)

NRND = Not Recommended for New Design

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.

Feature(s)

  • Low On-Resistance
  • Low Input Capacitance
  • Low Profile, 0.6mm Max Height
  • ESD Protected Gate

Application(s)

  • Load Switch
  • Power Management Functions
  • Automotive DC-DC convertor

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) Automotive
CISS Condition @|VDS| (V) 6, 6
CISS Typ (pF) 1028, 1003
Compliance (Only Automotive(Q) supports PPAP) Automotive
Configuration Complementary
ESD Diodes (Y|N) Yes
|IDS| @TA = +25°C (A) 5.1, 3.9
PD @TA = +25°C (W) 1.36
Polarity N+P
Compliance (Only Automotive supports PPAP) Automotive (Q)
QG Typ @ |VGS| = 10V (nC) 23.1, 20.8 (@8V)
QG Typ @ |VGS| = 4.5V (nC) 12.2, 13
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) 50, 115
RDS(ON)Max@ VGS(2.5V)(mΩ) 40, 81
RDS(ON)Max@ VGS(4.5V)(mΩ) 34, 59
|VDS| (V) 12, 12
|VGS| (±V) 8, 8
|VGS(TH)| Max (V) 1, 1
|VGS(TH)| Min (V) 0.4, 0.4

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf