Diodes Incorporated
PowerDi5060 8 Type C

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDi5060-8-Type-C.png
Back to MOSFET Master Table

DMC1018UPD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation Complementary Pair Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

Feature(s)

  • Thermally Efficient Package - Cooler Running Applications
  • High Conversion Efficiency
  • Low RDS(ON) – Minimizes On-State Losses
  • Low Input Capacitance
  • Fast Switching Speed

Application(s)

  • Notebook Battery Power Management
  • DC-DC Converters
  • Loadswitch

Product Specifications

Product Parameters

AEC Qualified Yes
Compliance (Only Automotive(Q) supports PPAP) Standard
Polarity N+P
ESD Diodes (Y|N) No
|VDS| (V) 12, 20 V
|VGS| (±V) 8, 12 ±V
|IDS| @TA = +25°C (A) 9.5, 6.9
PD @TA = +25°C (W) 2.3
RDS(ON)Max@ VGS(4.5V)(mΩ) 17, 32 mΩ
RDS(ON)Max@ VGS(2.5V)(mΩ) 25, 53 mΩ
|VGS(TH)| Min (V) 0.6, 0.6 V
|VGS(TH)| Max (V) 1.5, 1.5 V
QG Typ @ |VGS| = 4.5V (nC) 17.1, 8.6 nC
QG Typ @ |VGS| = 10V (nC) 30.4, 19 (@8V) nC
CISS Typ (pF) 1525, 866 pF
CISS Condition @|VDS| (V) 6, 6 V

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2495 2021-03-31 2021-07-01 Qualification of Additional Assembly & Test Sites and Additional Wafer Back Grinding and Back Metal Process
Source for Select Discrete Products
PCN-2439 2019-12-05 2020-03-05 Qualification of "Diodes Technology (Cheng Du) Company Limited" (CAT) as an Additional Assembly & Test Site, Using Gold
Bond Wire, and as an Additional Wafer Back Grinding and Back Metal Process Source on Select MOSFET Products

FAQs

Related Application FAQs