Diodes Incorporated
PowerDi5060 8 Type C

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details.

PowerDi5060-8-Type-C.png
Back to Inactve Datasheet Archive

DMC1017UPD (Not Recommended for new design)

NRND = Not Recommended for New Design

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Description

This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and loadswitch.

Application(s)

  • Notebook Battery Power Management
  • DC-DC Converters
  • Loadswitch

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP) On Request
CISS Condition @|VDS| (V) 6
CISS Typ (pF) 1787, 2100
ESD Diodes (Y|N) No
|IDS| @TA = +25°C (A) 9.5, 6.9
PD @TA = +25°C (W) 2.3
Polarity N+P
QG Typ @ |VGS| = 10V (nC) N/A
QG Typ @ |VGS| = 4.5V (nC) 18.6, 23.7
AEC Qualified Yes
RDS(ON)Max@ VGS(1.8V)(mΩ) N/A
RDS(ON)Max@ VGS(10V)(mΩ) N/A
RDS(ON)Max@ VGS(2.5V)(mΩ) 25, 53
RDS(ON)Max@ VGS(4.5V)(mΩ) 32, 17
|VDS| (V) 12, 20
|VGS| (±V) 8, 12
|VGS(TH)| Max (V) 1.5
|VGS(TH)| Min (V) 0.6

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2389 2019-02-05 2019-08-05 Device End of Life