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DLLFSD01T

ULTRA LOW LEAKAGE SURFACE MOUNT FAST SWITCHING DIODE

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Description

Ultra low leakage fast switching diodes in an ultra small surface mount package

Feature(s)

  • Fast Switching Speed, fast reverse recovery time.
  • Ultra-Low Reverse Leakage Current (~5nA @VR = 5V)
  • Very Low Capacitance (<1pF @ VR = 0V)

Application(s)

Mobile phones, battery-powered portable electronics

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

No

Configuration

Single

Polarity

Unidirectional

Power Rating(mW)

150 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

80 V

Reverse RecoveryTime trr (ns)

4 ns

Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω

4

V(BR)R (V) Min @IR=100μA

80

Maximum Average Rectifier Current IO (mA)

100 mA

Maximum Peak Forward Surge Current IFSM (A)

2 A

Forward Voltage Drop VF @ IF (mA)

0.62, 0.74, 0.94 mA

Maximum ReverseCurrent IR (µA)

0.01, 0.4, 0.1, 0.6, 0.2, 0.8 µA

TotalCapacitance CT (pF)

0.5 pF

VF(V) Max @ IF=100mA

1

Maximum Reverse Current IR @ VR (V)

80 V

VF(V) Max @ IF=10mA

0.855

IR(uA) Max @ VR=80V

0.2

CT(pF) Max @ VR = 0V, f = 1MHz

2.5

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site