Diodes Incorporated — Analog and discrete power solutions
Back to DHVSD3004S3

DHVSD3004S3

Surface-Mount High-Voltage Switching Diode

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • Surface-Mount Package Ideally Suited for Automated Insertion or Battery-Powered, Portable Applications
  • Extremely Low Reverse Leakage Current at High Temperature
  • Fast Switching Speed: ≤ 50ns
  • High Reverse Breakdown Voltage: ≥ 350V
  • Cutting-Edge Process Technology Used
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Configuration

Single

Polarity

Anode, Cathode

Power Rating(mW)

350 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

350 V

Reverse RecoveryTime trr (ns)

50 ns

IR(μA) Max @ VR=240V

0.1

V(BR)R (V) Min @IR=150μA

350

Maximum Average Rectifier Current IO (mA)

225 mA

Maximum Peak Forward Surge Current IFSM (A)

0.5 (@ 1s) A

Forward Voltage Drop VF @ IF (mA)

1.15V (@ 200mA) mA

Maximum ReverseCurrent IR (µA)

0.1 µA

TotalCapacitance CT (pF)

5 pF

VF(V) Max @ IF=20mA

0.87

VF(V) Max @ IF=100mA

0.998

VF(V) Max @ IF=200mA

1.15

Maximum Reverse Current IR @ VR (V)

0.1 ?A (@ 240V) V

CT(pF) Max @ VR = 0V, f = 1MHz

5

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.