Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOD123

Back to DHVSD3004S1Q

DHVSD3004S1Q

Surface Mount High Voltage Low Leakage Diode

Contact Sales

Feature(s)

Low Leakage Current: ≤100nA
Fast Switching Speed: ≤50ns
High Reverse Breakdown Voltage: ≥350V
Ideal for Battery-Powered, Portable Applications
Extremely Low Reverse Leakage Current at High Temperature
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3 & 4)
The DHVSD3004S1Q is suitable for automotive applications requiring specific change control; this part isAEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Automotive
AEC Qualified	Yes
Configuration	Single
Polarity	Anode, Cathode
Power Rating(mW)	350 mW
ESD Diodes (Y\|N)	No
Peak RepetitiveReverse VoltageV_RRM(V)	350 V
Reverse RecoveryTime trr (ns)	50 ns
IR(μA) Max @ VR=240V	0.1
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω	50ns
V(BR)R (V) Min @IR=150μA	350
Maximum Average Rectifier Current I_{O (mA)}	225 mA
Maximum Peak Forward Surge Current I_{FSM (A)}	4A @ 1us, 0.5A @ 1s A
Forward Voltage Drop V_F @ I_{F (mA)}	1.15V @ 200mA mA
Maximum ReverseCurrent I_R(µA)	0.1 µA
TotalCapacitance C_T(pF)	5 pF
VF(V) Max @ IF=20mA	0.87
VF(V) Max @ IF=100mA	0.998
VF(V) Max @ IF=200mA	1.15
Maximum Reverse Current I_R @ V_{R (V)}	0.1 @ 240V V
CT(pF) Max @ VR = 0V, f = 1MHz	5

Recommended Soldering Techniques

TN1.pdf