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DHVSD3004BRM

High-Voltage Surface-Mount Switching Diode Array

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Feature(s)

Two Series Diode Circuits Connect to Form Full Wave Bridge
Fast Switching Speed: Maximum of 50ns
High Reverse Breakdown Voltage Rating: 350V
Low Reverse Current: Maximum of 100nA when V_R= 240V at Room Temperature
New Cutting-Edge Process Technology Used
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/

Compliance (Only Automotive Supports PPAP)	Standard
AEC Qualified	No
Configuration	Dual-Dual, Series
Polarity	Anode, Cathode
Power Rating(mW)	350 mW
ESD Diodes (Y\|N)	No
Peak RepetitiveReverse VoltageV_RRM(V)	350 V
Reverse RecoveryTime trr (ns)	50 ns
IR(μA) Max @ VR=240V	0.1
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω	50
V(BR)R (V) Min @IR=150μA	350V
Maximum Peak Forward Surge Current I_{FSM (A)}	4.0, 1us A
Forward Voltage Drop V_F @ I_{F (mA)}	1.2V_200mA mA
Maximum ReverseCurrent I_R(µA)	0.1uA_240V µA
TotalCapacitance C_T(pF)	5 pF
VF(V) Max @ IF=20mA	0.87
VF(V) Max @ IF=100mA	1.05
VF(V) Max @ IF=200mA	1.2
Maximum Reverse Current I_R @ V_{R (V)}	0.1uA_240V V
CT(pF) Max @ VR = 0V, f = 1MHz	5

Recommended Soldering Techniques

TN1.pdf

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