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DGTD65T15H2TF

650V FIELD STOP IGBT

Datasheet

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Description

The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.

Feature(s)

High ruggedness for Motor Control
VCE(sat) Positive Temperature Coefficient
Very Soft, Fast Recovery Anti-Parallel Diode
Low EMI
Maximum Junction Temperature 175°C

Application(s)

Motor Controls

Product Specifications

Product Parameters

V_{CES (V)}	650 V
I_C @ +25°C (A)	30 A
I_C @ +100°C (A)	15 A
V_CE(sat) max @ +25°C (V)	2 V
V_CE(sat) typ @ +25°C (V)	1.65 V
E_ON typ @ +25°C (mJ)	0.27 mJ
E_OFF typ @ +25°C (mJ)	0.086 mJ
Power Dissipation @ T_C = +25°C (W)	48 W
Short Circuit (µs)	5 µs
Anti Parallel Diode	Yes

Technical Documents

Recommended Soldering Techniques

TN1.pdf