650V FIELD STOP IGBT
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The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness.
VCES (V) |
650 V |
|---|---|
IC @ +25°C (A) |
30 A |
IC @ +100°C (A) |
15 A |
VCE(sat) max @ +25°C (V) |
2 V |
VCE(sat) typ @ +25°C (V) |
1.65 V |
EON typ @ +25°C (mJ) |
0.27 mJ |
EOFF typ @ +25°C (mJ) |
0.086 mJ |
Power Dissipation @ TC = +25°C (W) |
48 W |
Short Circuit (µs) |
5 µs |
Anti Parallel Diode |
Yes |
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A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2770 | 2025-10-30 | 2025-10-30 | Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products |