DGD28225

Description

The DGD28225 is a high-frequency gate driver with an internal bootstrap diode capable of driving N-channel MOSFETs in a half-bridge configuration. the floating high-side driver is rated up to 30V in a bootstrap configuration.

System efficiency in the half-bridge is greatly improved with adaptive deadtime, 19ns rise and fall times, and 22ns propagation delays. UVLO for the high- and low-side protects the MOSFET during a loss of supply.

Fast and well-matched propagation delays and rise and fall times allow for a higher switching frequency, which enables a smaller, more compact power switching design using smaller associated components. To minimize component footprint, an internal boostrap diode is included.

The DGD28225 is packaged in a space-saving U-DFN3030-8 package. The device’s operating temperature extends from -40°C to +125°C.

Feature(s)

• 30V Floating High-Side Driver
• Drives Two N-Channel MOSFETs in a Half-Bridge Configuration
• Adaptive Deadtime of 22ns typical
• 1.5A Source / 1.5A Sink Output Current Capability for High Side
• 1.5A Source / 2.4A Sink Output Current Capability for Low Side
• Internal Bootstrap Diode
• V_CC Undervoltage Lockout
• Propagation Delay Typical of 22ns
• Fast Rise and Fall times of 19ns Typical
• Wide V_CC Operating Voltage 4.5V to 6V
• Extended Temperature Range: -40°C to +125°C
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/