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DFBR030U3LP (Obsolete)

3.0A SBR FULL BRIDGE RECTIFIER

Datasheet

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Description

Dual 30V N-Channel MOSFETs with Dual 3.0A Super Barrier Rectifier Diodes together packaged in a 4.0 x 4.0 x 0.6 mm DFN Package

Feature(s)

1. For two N-channel MOSFET transistors: Drain-Source Breakdown Voltage: 30V Maximum Drain Current: 3.2A
2. For two Super Barrier Rectifier Diodes: Forward Voltage Drop VF less than 0.42V Maximum leakage current IR is less than 400 uA at 25 oC
3. For the Rectifier as a whole: Rectifier Forward Voltage is less than 0.56V. Rectifier leakage and reverse leakage current are less than 1 mA.

Application(s)

Wireless Charging, AC-DC Rectification, Optimized for Power Management Applications for Portable Products.

Specifications & Technical Documents

Product Parameters

ESD Diodes (Y\|N)	Yes
IR(µA) Max @ VR=30V	400
Polarity	N+N
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V) (mΩ)	26
\|V_DS\| (V)	30
VF(V) Max @ IF=100mA	0.278
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	2.2

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products