Description
Dual 30V N-Channel MOSFETs with Dual 3.0A Super Barrier
Rectifier Diodes together packaged in a 4.0 x 4.0 x 0.6 mm
DFN Package
Feature(s)
1. For two N-channel MOSFET transistors:
Drain-Source Breakdown Voltage: 30V
Maximum Drain Current: 3.2A
2. For two Super Barrier Rectifier Diodes:
Forward Voltage Drop VF less than 0.42V
Maximum leakage current IR is less than 400 uA at 25 oC
3. For the Rectifier as a whole:
Rectifier Forward Voltage is less than 0.56V.
Rectifier leakage and reverse leakage current are less than 1
mA.
Application(s)
Wireless Charging, AC-DC Rectification, Optimized for Power
Management Applications for Portable Products.
