DFBR030U3LP (Obsolete)

3.0A SBR FULL BRIDGE RECTIFIER

Datasheet

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Description

Dual 30V N-Channel MOSFETs with Dual 3.0A Super Barrier Rectifier Diodes together packaged in a 4.0 x 4.0 x 0.6 mm DFN Package

Feature(s)

1. For two N-channel MOSFET transistors: Drain-Source Breakdown Voltage: 30V Maximum Drain Current: 3.2A
2. For two Super Barrier Rectifier Diodes: Forward Voltage Drop VF less than 0.42V Maximum leakage current IR is less than 400 uA at 25 oC
3. For the Rectifier as a whole: Rectifier Forward Voltage is less than 0.56V. Rectifier leakage and reverse leakage current are less than 1 mA.

Application(s)

Wireless Charging, AC-DC Rectification, Optimized for Power Management Applications for Portable Products.

Product Specifications

Product Parameters

Compliance (Only Automotive supports PPAP)	Standard
Compliance (Only Automotive(Q) supports PPAP)	Standard
Config/ Polarity	Dual 30V N + Dual 30A SBR
ESD Diodes (Y\|N)	Yes
\|I_DS\| @T_A = +25°C (A)	3.2
I_leak(µA) Max @ VLL= 0V, V_OUT = 5V	1000
I_leak(µA) Max @ VLL= 16V, no load	1000
IR(µA) Max @ VR=30V	400
IR(µA) Max @ VR=5V	150
P_D @T_A = +25°C (W)	0.5
Polarity	N+N
AEC Qualified	No
R_DS(ON)Max@ V_GS(10V)(mΩ)	26
V(BR)R (V) Min @IR=400µA	30
\|V_DS\| (V)	30
VF(V) Max @ IF=100mA	0.278
VF(V) Max @ IF=1A	0.37
VF(V) Max @ IF=2A	0.42
V_fd2(V) Max @ V_LL=+5V, I_OUT = 2A	0.56
\|V_GS\| (±V)	20
\|V_GS(TH)\| Max (V)	2.2

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2418	2019-11-07	2020-05-07	Device End of Life (EOL)