Diodes Incorporated — Analog and discrete power solutions
U DFN2510 10

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2510-10

U DFN2510 10

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2510-10

U DFN2510 10

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2510-10

Back to D3V3XA4B10LP

D3V3XA4B10LP

4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY

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Description

The D3V3XA4B10LP is a high-performance device suitable for protecting four high speed I/Os. These devices are assembled in UDFN2510- 10 package and have high ESD surge capability, low ESD clamping voltage and ultra-low capacitance.

Feature(s)

  • Clamping Voltage: 9.4V at 16A TLP
  • IEC 61000-4-2 (ESD): Air — ±12kV, Contact — ±12kV
  • IEC 61000-4-5 (Lightning): 4.0A (8/20μs)
  • 4 Channels of ESD Protection
  • Ultra-Low Channel Input Capacitance of 0.35pF Max
  • TLP Dynamic Resistance: 0.39Ω
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Application(s)

Typically used at high-speed ports such as USB 3.0, USB 3.1, Serial ATA, Display port.

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Configuration

Quad (Bidirectional)

Channel Input CapacitanceCT Typ (pF)

0.28 pF

Reverse Standoff Voltage VRWM(V)

3.3 V

Breakdown VoltageVBR Min(V)

5 V

Typ Reverse Leakage Current IR @ VRWM Max(µA)

1 µA

Maximum Peak Pulse Current IPP @ 8x20μs Max

4

Maximum Clamping Voltage @ Max Peak Pulse Current VC (V)

6.5 V

VESD IEC61000-4-2 Contact Discharge(kV)

12 kV

Related Content

Packages

Applications

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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