Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2510-10
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2510-10
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. U-DFN2510-10
4 Channel Low Capacitance TVS Diode Array
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The D3V3FA4U10LP is a high-performance device suitable for protecting four high-speed I/Os. It is engineered to protect sensitive electronic components from ESD events, which can occur during manufacturing, handling, or in the end-use environment. It is particularly suitable for high-speed data interfaces where maintaining signal integrity is crucial.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | No |
| Configuration | Unidirectional |
| Channel Input CapacitanceCT Typ (pF) | 0.4 pF |
| Reverse Standoff Voltage VRWM(V) | 3.3 V |
| Breakdown VoltageVBR Min(V) | 4 V |
| Typ Reverse Leakage Current IR @ VRWM Max(µA) | N/A µA |
| Maximum Peak Pulse Current IPP @ 8x20μs Max | 4 |
| Maximum Clamping Voltage @ Max Peak Pulse Current VC (V) | 11.5 V |
| VESD IEC61000-4-2 Contact Discharge(kV) | ±20 kV |
