N-Channel Enhancement Mode MOSFET
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This new generation uses advanced planar technology MOSFET, provide excellent high Voltage and fast switching, making it ideal for small-Signal and level shift applications.
Compliance (Only Automotive Supports PPAP) | Standard |
---|---|
AEC Qualified | Yes |
Polarity | N |
ESD Diodes (Y|N) | No |
|VDS| (V) | 600 V |
|VGS| (±V) | 20 ±V |
|IDS| @TA = +25°C (A) | 0.07 A |
PD @TA = +25°C (W) | 0.61 W |
RDS(ON)Max@ VGS(10V) (mΩ) | 160000 mΩ |
RDS(ON)Max@ VGS(4.5V) (mΩ) | 190000 mΩ |
|VGS(TH)| Max (V) | 4.5 V |
QG Typ @ |VGS| = 10V (nC) | 1.08 nC |
CISS Typ (pF) | 21.8 @ 25V pF |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2720 | 2025-02-12 | 2025-05-13 | Change Lead Frame Type from SOT-23R to SOT-23T for Select Discrete Products |