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BSS123K

N-CHANNEL ENHANCEMENT MODE MOSFET

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Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Application(s)

  • Small Servo Motor Control
  • Power MOSFET Gate Drivers
  • Switching Applications

Feature(s)

  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Low Input/Output Leakage
  • High Drain-Source Voltage Rating
  • ESD Protected Gate
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen and Antimony Free. “Green” Device 
  • For automotive applications requiring specific change control
    (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and
    manufactured in IATF 16949 certified facilities), please
    contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/

Product Specifications

Product Parameters

Qualified to AEC-Q10x No
Compliance (Only Automotive supports PPAP) Standard
Polarity N
ESD Diodes (Y|N) Yes
VDS (V) 100 V
VGS (±V) 20 ±V
IDS @TA = +25°C (A) 0.23 A
PD @TA = +25°C (W) 0.7 W
RDS(ON)Max @ VGS(10V)(mΩ) 6000 mΩ
RDS(ON)Max @ VGS(4.5V)(mΩ) 10000 mΩ
VGS (th) Max (V) 2 V
QG Typ @ VGS = 4.5V (nC) 0.7 nC
QG Typ@ VGS = 10V(nC) 1.3 nC

Related Content

Packages

Applications

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

FAQs

Related Application FAQs