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BSN20

N-CHANNEL ENHANCEMENT MODE MOSFET

Datasheet

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Description

This new generation 50V N channel enhancement mode MOSFET has been designed to minimise R_DS(on) and yet maintain superior switching performance. This device is ideally suited to portable , other power management functions.

Application(s)

Backlighting

DC-DC Converters

Power management functions

Product Specifications

Product Parameters

AEC Qualified	Yes
Compliance (Only Automotive(Q) supports PPAP)	Standard
Polarity	N
ESD Diodes (Y\|N)	No
\|V_DS\| (V)	50 V
\|V_GS\| (±V)	20 ±V
\|I_DS\| @T_A = +25°C (A)	0.5 A
P_D @T_A = +25°C (W)	0.6 W
R_DS(ON)Max@ V_GS(10V)(mΩ)	1800 mΩ
R_DS(ON)Max@ V_GS(4.5V)(mΩ)	2000 mΩ
\|V_GS(TH)\| Max (V)	1.5 V
Q_G Typ @ \|V_GS\| = 10V (nC)	0.8 nC
C_ISS Typ (pF)	21.8 @ 10V pF

Technical Documents

SPICE Model

BSN20.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2425	2019-10-04	2020-01-04	Qualification of Additional Wafer Solderable Front Metal Plating, Back Grinding and Back Metal Process Source, and Additional Wafer Source for Select Products.