Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. SOT23
N-Channel Enhancement Mode MOSFET
Log in or register to manage email notifications about changes to datasheets or PCNs for this part.
| Compliance (Only Automotive Supports PPAP) | Standard |
|---|---|
| AEC Qualified | Yes |
| Polarity | N |
| ESD Diodes (Y|N) | No |
| |VDS| (V) | 60 V |
| |VGS| (±V) | 20 ±V |
| |IDS| @TA = +25°C (A) | 0.25 A |
| PD @TA = +25°C (W) | 0.3 W |
| RDS(ON)Max@ VGS(10V) (mΩ) | 5000 mΩ |
| |VGS(TH)| Max (V) | 3 V |
| CISS Typ (pF) | 22 @ 10V pF |
Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
| PCN # | Issue Date | Implementation Date | Subject |
|---|---|---|---|
| PCN-2744 | 2025-06-04 | 2025-09-03 | Additional Wafer Source for Select Discrete Products |
| PCN-2690 | 2024-05-29 | 2024-08-29 | Qualification of Diodes’ subcontractor Eris Technology Corporation (Eris) in Taoyuan, Taiwan as Additional Assembly & Test Site and Diodes internal JKFAB in HsinChu, Taiwan as additional wafer source for Select Discrete Products. |
