Back to Transistor (BJT) Master Table

BCX5616Q

NPN, 80V, 1A, SOT89

Contact Sales

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

BVCEO > 80V
Ic = 1A High Continuous Collector Current
ICM = 2.0A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
Epitaxial Planar Die Construction
Complementary PNP types: BCX5316Q
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen- and Antimony-Free. “Green” Device (Note 3)
The BCX5616Q is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Product Specifications

Category	Medium Power Transistor
Compliance(Only Automotive supports PPAP)	Automotive
Polarity	NPN
VCEO, VCES (V)	80
IC (A)	1
ICM (A)	1.5
PD (W)	1
hFE (Min)	100
hFE (@ IC) (A)	0.15
h_FE(Min 2)	25
hFE (@ IC2) (A)	0.5
VCE(sat) Max (mV)	500
V_CE(SAT) (@ IC/IB) (A/mA)	0.5/50
VCE(sat) (Max.2) (mV)	-
VCE(sat) (@ IC/IB2) (A/mA)	-
fT (MHz)	150
RCE(sat) (mΩ)	-

SPICE Model

BCX5616Q.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile