Diodes Incorporated
Back to Transistor (BJT) Master Table

BCP5616T

NPN, 80V, 1A, SOT223

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Feature(s)

  • BVCEO > 80V
  • IC = 1A High Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) <500mV @ 0.5A
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • For automotive applications requiring specific change
    control (i.e. parts qualified to AEC-Q100/101/200, PPAP
    capable, and manufactured in IATF 16949 certified facilities),
    please contact us or your local Diodes representative.
    https://www.diodes.com/quality/product-definitions/
    An Automotive-Compliant Part is Available Under Separate
    Datasheet (BCP5616TQ

Application(s)

  • Medium Power Switching or Amplification Applications
  • AF Driver and Output Stages

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Standard
Polarity NPN
VCEO, VCES (V) 80
IC (A) 1
ICM (A) 2
PD (W) 2.5
hFE (Min) 100
hFE (@ IC) (A) 0.15
hFE(Min 2) 40
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) N/A
VCE(sat) (@ IC/IB2) (A/mA) N/A
fT (MHz) 150
RCE(sat) (mΩ) N/A

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf