Diodes Incorporated
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BCP5616TQ

NPN, 80V, 1A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 80V
  • IC = 1A High Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) <500mV @ 0.5A
  • Totally Lead-Free & Fully RoHS Compliant 
  • Halogen- and Antimony-Free. “Green” Device 
  • The BCP5616TQ is suitable for automotive applications
    requiring specific change control; this part is AEC-Q101
    qualified, PPAP capable, and manufactured in IATF16949
    certified facilities.
    https://www.diodes.com/quality/product-definitions/

Application(s)

  • Medium Power Switching or Amplification Applications
  • AF Driver and Output Stages

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 80
IC (A) 1
ICM (A) 2
PD (W) 2.5
hFE (Min) 100
hFE (@ IC) (A) 0.15
hFE(Min 2) 40
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) N/A
VCE(sat) (@ IC/IB2) (A/mA) N/A
fT (MHz) 150
RCE(sat) (mΩ) N/A

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC