Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

BVCEO > 80V
IC = 1A High Continuous Collector Current
ICM = 2A Peak Pulse Current
2W Power Dissipation
Low Saturation Voltage VCE(SAT) <500mV @ 0.5A
Totally Lead-Free & Fully RoHS Compliant
Halogen- and Antimony-Free. “Green” Device
The BCP5616TQ is suitable for automotive applications
requiring specific change control; this part is AEC-Q101
qualified, PPAP capable, and manufactured in IATF16949
certified facilities.
https://www.diodes.com/quality/product-definitions/

Application(s)

Medium Power Switching or Amplification Applications
AF Driver and Output Stages

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)	Automotive
Category	Medium Power Transistor
Polarity	NPN
RCE(sat) (mΩ)	N/A
VCEO, VCES (V)	80
IC (A)	1
ICM (A)	2
PD (W)	2.5
hFE (Min)	100
hFE (@ IC) (A)	0.15
h_FE(Min 2)	40
hFE (@ IC2) (A)	0.5
VCE(sat) Max (mV)	500
V_CE(SAT) (@ IC/IB) (A/mA)	0.5/50
VCE(sat) (Max.2) (mV)	N/A
VCE(sat) (@ IC/IB2) (A/mA)	N/A
fT (MHz)	150

Technical Documents

SPICE Model

BCP5616TQ.spice.txt

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products

BCP5616TQ