Diodes Incorporated
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BCP5616Q

NPN, 80V, 1A, SOT223

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Feature(s)

  • BVCEO > 45V & 80V
  • IC = 1A Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(sat) < 500mV @ 0.5A
  • Complementary PNP Type: BCP5316Q
  • Totally Lead-Free & Fully RoHS Compliant
  • Halogen- and Antimony-Free. “Green” Device
  • The BCP5416Q and BCP5616Q are suitable for automotive applications requiring specific change control; these parts are AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities. https://www.diodes.com/quality/product-definitions/

Application(s)

 

  • Medium Power Switching or Amplification Applications
  • AF Drivers and Output Stages Mechanical Data

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 80
IC (A) 1
ICM (A) 2
PD (W) 2
hFE (Min) 100
hFE (@ IC) (A) 0.15
hFE(Min 2) 25
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) -
VCE(sat) (@ IC/IB2) (A/mA) -
fT (MHz) 150
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2382 2018-10-17 2019-01-17 Qualification of Additional Assembly and Test (A/T) site, Conversion to Palladium Coated Copper Bond Wire with Modified Top Metal Composition and Thickness, New Lead Frame Type, New Die Attach Material and New Molding Compound for Part Numbers BCP5616QTA and BCP5616QTC