Diodes Incorporated
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BCP5610Q

NPN, 80V, 1A, SOT223

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Feature(s)

  • BVCEO > 80V
  • IC = 1A High Continuous Collector Current
  • ICM = 2A Peak Pulse Current
  • 2W Power Dissipation
  • Low Saturation Voltage VCE(SAT) < 500mV @ 0.5A

Product Specifications

Product Parameters

Category Medium Power Transistor
Compliance(Only Automotive supports PPAP) Automotive
Polarity NPN
VCEO, VCES (V) 80
IC (A) 1
ICM (A) 2
PD (W) 2
hFE (Min) 63
hFE (@ IC) (A) 0.15
hFE(Min 2) 25
hFE (@ IC2) (A) 0.5
VCE(sat) Max (mV) 500
VCE(SAT) (@ IC/IB) (A/mA) 0.5/50
VCE(sat) (Max.2) (mV) -
VCE(sat) (@ IC/IB2) (A/mA) -
fT (MHz) 150
RCE(sat) (mΩ) -

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC