Diodes Incorporated — Analog and discrete power solutions
X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

X2 DFN1006 3

Image shown is for reference only. Actual package may vary. Refer to the product data sheet for package details. X2-DFN1006-3

Back to BC857BLP4

BC857BLP4

PNP, 45V, 0.1A, DFN1006-3

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Feature(s)

  • BVCEO > -45V
  • IC = -100mA High Collector Current
  • PD = 1W Power Dissipation
  • 6mm2 Package Footprint, 13 Times Smaller than SOT23
  • 4mm Height Package Minimizing Off-Board Profile
  • Complementary NPN Type: BC847BLP4
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. "Green" Device (Note 3)
  • This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/
  • An automotive-compliant part is available under separate datasheet (BC857BLP4Q)

Specifications & Technical Documents

Product Parameters

RCE(sat) (mΩ)

-

Compliance (Only Automotive Supports PPAP)

Standard

Category

Small Signal Transistor

Polarity

PNP

VCEO, VCES (V)

45

IC (A)

0.1

ICM (A)

0.2

PD (W)

0.4

hFE (Min)

220

hFE (@ IC) (A)

0.002

hFE(Min 2)

-

hFE (@ IC2) (A)

-

VCE(sat) Max (mV)

300

VCE(SAT) (@ IC/IB) (A/mA)

0.01/0.5

VCE(sat) (Max.2) (mV)

650

VCE(sat) (@ IC/IB2) (A/mA)

0.1/5

fT (MHz)

100

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site