Diodes Incorporated — Analog and discrete power solutions
X2 DFN0806 3

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BC847BFAQ

NPN, 45V, 0.1A, DFN0806-3

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Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Feature(s)

  • BVCEO > 45V
  • IC = 100mA High Collector Current
  • PD = 435mW Power Dissipation
  • 0.48mm2 Package Footprint, 16 Times Smaller than SOT23
  • 0.4mm Height Package Minimizing Off-Board Profile

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

Category

Small Signal Transistor

Polarity

NPN

RCE(sat) (mΩ)

-

VCEO, VCES (V)

45

IC (A)

0.1

ICM (A)

0.2

PD (W)

0.435

hFE (Min)

200

hFE (@ IC) (A)

0.002

hFE (@ IC2) (A)

-

VCE(sat) Max (mV)

125

VCE(SAT) (@ IC/IB) (A/mA)

0.01/0.5

VCE(sat) (Max.2) (mV)

300

VCE(sat) (@ IC/IB2) (A/mA)

0.1/5

fT (MHz)

170

Related Content

Packages

Technical Documents

SPICE Model

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products