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BAV3004WQ (NRND)

NRND = Not Recommended for New Design

SURFACE MOUNT LOW LEAKAGE DIODE

Datasheet

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Feature(s)

Low Leakage Current: ≤100nA
Fast Switching Speed: ≤50ns
High Reverse Breakdown Voltage: ≥350V
Ideal for Battery-Powered, Portable Applications
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The BAV3004WQ is suitable for automotive applications requiring specific change control and is AEC-Q101 qualified, is PPAP capable, and is manufactured in IATF16949:2016 certified facilities.

Specifications & Technical Documents

Product Parameters

Configuration	Single
CT(pF) Max @ VR = 0V, f = 1MHz	5
ESD Diodes (Y\|N)	No
Forward Voltage Drop V_F @ I_{F (mA)}	1.25V @ 200
Maximum Average Rectifier Current I_{O (mA)}	225
Maximum Peak Forward Surge Current I_{FSM (A)}	4
Maximum ReverseCurrent I_R(µA)	0.1
Maximum Reverse Current I_R @ V_{R (V)}	240
Peak RepetitiveReverse VoltageV_RRM(V)	350
Polarity	Cathode Bar
Power Rating(mW)	400
AEC Qualified	Yes
Reverse RecoveryTime trr (ns)	50
TotalCapacitance C_T(pF)	5
VF(V) Max @ IF=100mA	1

Technical Documents

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

RoHSFile

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN #	Issue Date	Implementation Date	Subject
PCN-2770	2025-10-30	2025-10-30	Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2614	2023-02-23	2023-08-23	Device End of Life (EOL) - Automotive
PCN-2545	2021-10-05	2022-01-05	Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462	2020-05-08	2021-04-11	Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)