Diodes Incorporated — Analog and discrete power solutions
Back to BAV199T

BAV199T

switching diode

Contact Sales

Log in or register to manage email notifications about changes to datasheets or PCNs for this part.

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Standard

AEC Qualified

Yes

Configuration

Dual, Series

Polarity

Anode, Cathode

Power Rating(mW)

150 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

85 V

Reverse RecoveryTime trr (ns)

3000 ns

Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω

3000

V(BR)R (V) Min @IR=100μA

85

Maximum Average Rectifier Current IO (mA)

215 mA

Maximum Peak Forward Surge Current IFSM (A)

4 A

Forward Voltage Drop VF @ IF (mA)

1.1 mA

Maximum ReverseCurrent IR (µA)

0.005 µA

TotalCapacitance CT (pF)

2 pF

Maximum Reverse Current IR @ VR (V)

75 V

VF(V) Max @ IF=1.0mA

0.715

VF(V) Max @ IF=10mA

0.855

IR(uA) Max @ VR=80V

5nA@75V

Related Content

Packages

Technical Documents

SPICE Model

MDS Reports

Recommended Soldering Techniques

TN1.pdf

RoHS CofC

Purchase & Availability

Something went wrong with your request. Please try again later. If this problem continues, please contact Diodes support for assistance.

Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2544 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Products
PCN-2461 2020-05-08 2021-04-05 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site