SURFACE MOUNT LOW LEAKAGE DIODE
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Surface mount low leakage diode.
AEC Qualified | Yes |
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Compliance (Only Automotive supports PPAP) | Automotive |
Configuration | Anode, Cathode |
Polarity | Anode, Cathode |
Power Rating(mW) | 200 mW |
ESD Diodes (Y|N) | No |
Peak RepetitiveReverse VoltageVRRM (V) | 85 V |
Reverse RecoveryTime trr (ns) | 3000 ns |
Maximum Average Rectifier Current IO (mA) | 215 mA |
Maximum Peak Forward Surge Current IFSM (A) | 4 A |
Forward Voltage Drop VF @ IF (mA) | 0.9, 1 mA |
Maximum ReverseCurrent IR (µA) | 0.005 µA |
TotalCapacitance CT (pF) | 1.5 pF |
VF(V) Max @ IF=100mA | 1 |
V(BR)R (V) Min @IR=100μA | 85 |
Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω | 3000 |
Maximum Reverse Current IR @ VR (V) | 75 V |
IR(uA) Max @ VR=80V | 5nA@75V |
A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.
PCN # | Issue Date | Implementation Date | Subject |
---|---|---|---|
PCN-2640 | 2023-09-12 | 2024-03-13 | Device End of Life (EOL) - Automotive |
PCN-2545 | 2021-10-05 | 2022-01-05 | Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products |
PCN-2462 | 2020-05-08 | 2021-04-11 | Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive) |
PCN-2319 | 2018-03-09 | 2018-06-09 | Qualification of Alternative Wafer Sources for Select Automotive Products Due to Closure of Diodes FabTech (KFAB) Facility |