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BAV116WSQ

SURFACE MOUNT LOW LEAKAGE DIODE

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Description

Surface mount low leakage diode.

Feature(s)

  • Ultra Low Leakage Current (5nA @ VR = 75V)
  • Low Capacitance

Application(s)

  • Mobile Phones
  • Portable and Consumer Electronics

Specifications & Technical Documents

Product Parameters

Compliance (Only Automotive Supports PPAP)

Automotive

AEC Qualified

Yes

Configuration

Anode, Cathode

Polarity

Anode, Cathode

Power Rating(mW)

200 mW

ESD Diodes (Y|N)

No

Peak RepetitiveReverse VoltageVRRM (V)

85 V

Reverse RecoveryTime trr (ns)

3000 ns

Trr(ns) Max @ IF=IR=10 mA, Irr=0.1xIR, RL=100Ω

3000

V(BR)R (V) Min @IR=100μA

85

Maximum Average Rectifier Current IO (mA)

215 mA

Maximum Peak Forward Surge Current IFSM (A)

4 A

Forward Voltage Drop VF @ IF (mA)

0.9, 1 mA

Maximum ReverseCurrent IR (µA)

0.005 µA

TotalCapacitance CT (pF)

1.5 pF

VF(V) Max @ IF=100mA

1

Maximum Reverse Current IR @ VR (V)

75 V

IR(uA) Max @ VR=80V

5nA@75V

Related Content

Packages

Technical Documents

Recommended Soldering Techniques

TN1.pdf

Purchase & Availability

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Product Change Notices (PCNs)

A PCN may only apply to specific orderable part numbers in this datasheet. Please refer to the corresponding PCN to see the exact orderable part number(s) affected.

PCN # Issue Date Implementation Date Subject
PCN-2770 2025-10-30 2025-10-30 Add Fab Site Code, Country of Diffusion (COD) and Assembly Site Origin (ASO) on Product and Shipping Labels for all Diodes Products
PCN-2640 2023-09-12 2024-03-13 Device End of Life (EOL) - Automotive
PCN-2545 2021-10-05 2022-01-05 Phenitec Wafer Manufacturing Site Change and Additional Wafer Source on Select Automotive Products
PCN-2462 2020-05-08 2021-04-11 Phenitec Wafer Manufacturing Site Change, Additional Wafer Sources, Wafer Diameter Change, Additional Assembly and Test Site (Automotive)